NP161N04TUG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 160A TO263-7
$3.55
Available to order
Reference Price (USD)
1+
$3.55000
500+
$3.5145
1000+
$3.479
1500+
$3.4435
2000+
$3.408
2500+
$3.3725
Exquisite packaging
Discount
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Renesas Electronics America Inc presents NP161N04TUG-E1-AY, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NP161N04TUG-E1-AY delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 20.25 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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