NP160N055TUJ-E1-AY
Renesas
Renesas
NP160N055TUJ-E1-AY - SWITCHINGN-
$2.61
Available to order
Reference Price (USD)
1+
$2.61044
500+
$2.5843356
1000+
$2.5582312
1500+
$2.5321268
2000+
$2.5060224
2500+
$2.479918
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with NP160N055TUJ-E1-AY, a high-quality Transistors - FETs, MOSFETs - Single from Renesas. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NP160N055TUJ-E1-AY provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Toshiba Semiconductor and Storage
TK16V60W5,LVQ
Diotec Semiconductor
MMFTP3334K-AQ
Renesas Electronics America Inc
RJK1525DPS-00#T2
Renesas Electronics America Inc
RJK0226DNS-WS#J5
Renesas Electronics America Inc
RJK03J1DPA-00#J5A
Diodes Incorporated
DMN3010LFG-7
IXYS
IXTY1N120PTRL
Diodes Incorporated
DMP3028LFDEQ-7
Diodes Incorporated
DMN6069SFVW-7
Vishay Siliconix