NJG1812ME4-TE1
Nisshinbo Micro Devices Inc.
Nisshinbo Micro Devices Inc.
HIGH POWERDPDT SWITCH GAAS MMIC
$0.78
Available to order
Reference Price (USD)
1+
$0.78300
500+
$0.77517
1000+
$0.76734
1500+
$0.75951
2000+
$0.75168
2500+
$0.74385
Exquisite packaging
Discount
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Elevate your RF designs with the NJG1812ME4-TE1 RF Switches from Nisshinbo Micro Devices Inc., offering industry-leading performance and reliability. These switches come with features such as wide bandwidth, low power consumption, and excellent repeatability. Perfect for applications in smart grids, remote sensing, and broadcast systems. Have questions? Contact our team now for expert support and detailed product information!
Specifications
- Product Status: Active
- RF Type: CDMA, GSM, LTE, UMTS
- Topology: -
- Circuit: DPDT
- Frequency Range: 3GHz
- Isolation: 17dB
- Insertion Loss: 0.45dB
- Test Frequency: 2.7GHz
- P1dB: -
- IIP3: -
- Features: DC Blocked
- Impedance: 50Ohm
- Voltage - Supply: 2.4V ~ 5V
- Operating Temperature: -40°C ~ 105°C
- Package / Case: 12-XFQFN Exposed Pad
- Supplier Device Package: 12-EQFN (2x2)
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