NGTB75N65FL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 100A TO247
$7.59
Available to order
Reference Price (USD)
1+
$8.03000
30+
$6.95167
120+
$6.07292
510+
$5.32425
1,020+
$4.67325
Exquisite packaging
Discount
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Choose NGTB75N65FL2WG Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes NGTB75N65FL2WG a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 595 W
- Switching Energy: 1.5mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 110ns/270ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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