NE68139-T1-A
Renesas
Renesas
SAME AS 2SC4094 NPN SILICON AMPL
$2.00
Available to order
Reference Price (USD)
1+
$2.00000
500+
$1.98
1000+
$1.96
1500+
$1.94
2000+
$1.92
2500+
$1.9
Exquisite packaging
Discount
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Upgrade your RF designs with Renesas's NE68139-T1-A Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how NE68139-T1-A can enhance your projects!
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 15dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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