NE66219-T1-A
Renesas
Renesas
RF TRANS NPN 3.3V 21GHZ SOT523
$2.40
Available to order
Reference Price (USD)
1+
$2.40000
500+
$2.376
1000+
$2.352
1500+
$2.328
2000+
$2.304
2500+
$2.28
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Designed for the future, Renesas's NE66219-T1-A RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.3V
- Frequency - Transition: 21GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
- Gain: 14dB
- Power - Max: 115mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
Related Products
onsemi
KSP10BU
MACOM Technology Solutions
PH1090-350L
NXP USA Inc.
BFU520AVL
MACOM Technology Solutions
MRF428
Infineon Technologies
BFP540FESDH6327XTSA1
onsemi
55GN01CA-TB-E
NXP USA Inc.
BFU668F,115
NTE Electronics, Inc
NTE54MP
Toshiba Semiconductor and Storage
MT3S111TU,LF
Renesas