NE3520S03-T1C-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF K BAND, GALLIUM ARSENIDE, N-C
$1.11
Available to order
Reference Price (USD)
1+
$1.11000
500+
$1.0989
1000+
$1.0878
1500+
$1.0767
2000+
$1.0656
2500+
$1.0545
Exquisite packaging
Discount
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Meet Renesas Electronics America Inc's NE3520S03-T1C-A, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Active
- Transistor Type: HFET
- Frequency: 20GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-SMD
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