NE3516S02-A
CEL
CEL
IC HJ-FET RF N-CH S02 4-MICROX
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Engineered for excellence, CEL's NE3516S02-A RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel GaAs HJ-FET
- Frequency: 12GHz
- Gain: 14dB
- Voltage - Test: 2 V
- Current Rating (Amps): 60mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: 165mW
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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