NE3508M04-T2-A
CEL
CEL
FET RF 4V 2GHZ 4-TSMM
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Discover high-performance NE3508M04-T2-A RF MOSFETs from CEL, designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 2GHz
- Gain: 14dB
- Voltage - Test: 2 V
- Current Rating (Amps): 120mA
- Noise Figure: 0.45dB
- Current - Test: 10 mA
- Power - Output: 18dBm
- Voltage - Rated: 4 V
- Package / Case: SOT-343F
- Supplier Device Package: F4TSMM, M04
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