NDSH20120C
onsemi
onsemi
SIC DIODE GEN2.0 1200V TO
$5.68
Available to order
Reference Price (USD)
1+
$5.67722
500+
$5.6204478
1000+
$5.5636756
1500+
$5.5069034
2000+
$5.4501312
2500+
$5.393359
Exquisite packaging
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Achieve superior power conversion with NDSH20120C Single Rectifier Diodes from onsemi. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with onsemi's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 26A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Capacitance @ Vr, F: 1480pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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