Shopping cart

Subtotal: $0.00

MURTA400120

GeneSiC Semiconductor
MURTA400120 Preview
GeneSiC Semiconductor
DIODE GEN 1.2KV 200A 3 TOWER
$174.15
Available to order
Reference Price (USD)
18+
$121.73056
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower

Related Products

Micro Commercial Co

MBRB20150CT-TP

Panjit International Inc.

SD1020CS_L2_00001

Vishay General Semiconductor - Diodes Division

VS-20CTQ150-1-M3

Vishay General Semiconductor - Diodes Division

VB30150C-E3/8W

Taiwan Semiconductor Corporation

MBRS10150CTH

Fairchild Semiconductor

FFB20UP20DN

Panjit International Inc.

MBR6045PT_T0_00001

Comchip Technology

CDSV6-4148-G

Vishay General Semiconductor - Diodes Division

VS-8CWH02FNTRLHM3

Top