Shopping cart

Subtotal: $0.00

MURTA30060R

GeneSiC Semiconductor
MURTA30060R Preview
GeneSiC Semiconductor
DIODE GEN PURP 600V 150A 3 TOWER
$159.91
Available to order
Reference Price (USD)
18+
$109.39222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 600 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower

Related Products

Vishay General Semiconductor - Diodes Division

VS-10CWH02FNTRR-M3

GeneSiC Semiconductor

MURT30020

Vishay General Semiconductor - Diodes Division

V10DM150C-M3/I

STMicroelectronics

STTH2002CT

Vishay General Semiconductor - Diodes Division

VS-30CPQ060-N3

Diotec Semiconductor

BAS31R13

Vishay General Semiconductor - Diodes Division

VS-VSKD166/08PBF

NTE Electronics, Inc

NTE645

Top