MURT20060R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 600V 100A 3TOWER
$104.49
Available to order
Reference Price (USD)
25+
$93.45960
Exquisite packaging
Discount
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The MURT20060R by GeneSiC Semiconductor is a high-performance diode in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Offering robust construction and advanced features, this product is perfect for engineers and designers seeking reliable components. The MURT20060R excels in efficiency, with minimal power loss and high-speed switching capabilities. Whether for industrial machinery or consumer electronics, GeneSiC Semiconductor delivers unmatched quality. Submit your inquiry today to find out how this product can meet your needs!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 160 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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