MT3S113TU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 11.2GHZ UFM
$0.27
Available to order
Reference Price (USD)
3,000+
$0.25620
6,000+
$0.24339
15,000+
$0.23333
30,000+
$0.22692
Exquisite packaging
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Designed for the future, Toshiba Semiconductor and Storage's MT3S113TU,LF RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.3V
- Frequency - Transition: 11.2GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 12.5dB
- Power - Max: 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: UFM
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Toshiba Semiconductor and Storage