MT3S111(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 6V 11.5GHZ SMINI
$0.62
Available to order
Reference Price (USD)
3,000+
$0.24780
6,000+
$0.23541
15,000+
$0.22568
30,000+
$0.21948
Exquisite packaging
Discount
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Upgrade your RF designs with Toshiba Semiconductor and Storage's MT3S111(TE85L,F) Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MT3S111(TE85L,F) can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 11.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 12dB
- Power - Max: 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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