MSR2N3637UB/TR
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$127.66
Available to order
Reference Price (USD)
1+
$127.66500
500+
$126.38835
1000+
$125.1117
1500+
$123.83505
2000+
$122.5584
2500+
$121.28175
Exquisite packaging
Discount
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Upgrade your electronic projects with MSR2N3637UB/TR by Microchip Technology, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, MSR2N3637UB/TR provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Microchip Technology difference.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB