MSCSM120TLM31C3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$273.83
Available to order
Reference Price (USD)
1+
$273.83000
500+
$271.0917
1000+
$268.3534
1500+
$265.6151
2000+
$262.8768
2500+
$260.1385
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Microchip Technology s MSCSM120TLM31C3AG, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for MSCSM120TLM31C3AG.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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