MSCSM120AM31CT1AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP1F
$134.02
Available to order
Reference Price (USD)
1+
$134.02000
500+
$132.6798
1000+
$131.3396
1500+
$129.9994
2000+
$128.6592
2500+
$127.319
Exquisite packaging
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Optimize your electronic circuits with Microchip Technology s MSCSM120AM31CT1AG, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how MSCSM120AM31CT1AG can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1F
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