MSCSM120AM042CT6AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6C
$896.94
Available to order
Reference Price (USD)
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$896.94000
500+
$887.9706
1000+
$879.0012
1500+
$870.0318
2000+
$861.0624
2500+
$852.093
Exquisite packaging
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The MSCSM120AM042CT6AG from Microchip Technology is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, MSCSM120AM042CT6AG delivers consistent quality. Contact us now to learn more and secure your supply of Microchip Technology s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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