MSC180SMA120SA
Microchip Technology
Microchip Technology
MOSFET SIC 1200 V 180 MOHM TO-26
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Upgrade your electronic designs with MSC180SMA120SA by Microchip Technology, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, MSC180SMA120SA ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
- Vgs(th) (Max) @ Id: 3.26V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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