MS1512
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 25V 860MHZ M122
$0.00
Available to order
Reference Price (USD)
75+
$61.74267
Exquisite packaging
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Upgrade your RF designs with Microsemi Corporation's MS1512 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MS1512 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 860MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 19.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 1.2A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: M122
- Supplier Device Package: M122