MS1008
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 30MHZ M164
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with Microsemi Corporation's MS1008 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MS1008 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 14dB
- Power - Max: 233W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V
- Current - Collector (Ic) (Max): 10A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M164
- Supplier Device Package: M164
Related Products
Central Semiconductor Corp
CP616-CM5160-WN
Microsemi Corporation
60159
Microsemi Corporation
SD1372-03H
Microsemi Corporation
TAN350
Microsemi Corporation
76020H
Central Semiconductor Corp
CP618-CM5583-CT
Microsemi Corporation
MS2201
Microsemi Corporation
JTDB25
Microsemi Corporation
44022H
Central Semiconductor Corp