MRFG35002N6AT1
NXP USA Inc.
NXP USA Inc.
FET RF 8V 3.55GHZ PLD-1.5
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Engineered for excellence, NXP USA Inc.'s MRFG35002N6AT1 RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Obsolete
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 10dB
- Voltage - Test: 6 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 65 mA
- Power - Output: 158mW
- Voltage - Rated: 8 V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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