MRFE6VP8600HSR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
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NXP USA Inc. presents the MRFE6VP8600HSR6 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS (Dual)
- Frequency: 860MHz
- Gain: 19.3dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 125W
- Voltage - Rated: 130 V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
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