MRFE6VP6600NR3,528
NXP USA Inc.
NXP USA Inc.
WIDEBAND RF POWER LDMOS TRANSIST
$86.20
Available to order
Reference Price (USD)
1+
$86.20000
500+
$85.338
1000+
$84.476
1500+
$83.614
2000+
$82.752
2500+
$81.89
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with MRFE6VP6600NR3,528 from NXP USA Inc., a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, MRFE6VP6600NR3,528 guarantees performance and longevity. Interested? Send us an inquiry and let NXP USA Inc. support your next project.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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