MRFE6VP5600HSR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230S
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The MRFE6VP5600HSR6 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 600W
- Voltage - Rated: 130 V
- Package / Case: NI-1230-4S
- Supplier Device Package: NI-1230-4S
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