MRF8S21120HR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ NI780H
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For mission-critical RF amplification, choose NXP USA Inc.'s MRF8S21120HR3 MOSFETs. Combining silicon carbide (SiC) robustness with precision matching networks, they outperform in avionics and marine navigation systems. Extended lifecycle ratings reduce total cost of ownership. Your perfect component awaits click inquire to connect with our technical specialists!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 17.6dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 850 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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