MRF8S19260HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 1.99GHZ NI1230S-8
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Engineered for excellence, NXP USA Inc.'s MRF8S19260HSR5 RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.99GHz
- Gain: 18.2dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 74W
- Voltage - Rated: 65 V
- Package / Case: SOT-1110B
- Supplier Device Package: NI1230S-8
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