MRF8S19140HR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.96GHZ NI780H
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Unlock next-gen RF performance with MRF8S19140HR3 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.96GHz
- Gain: 19.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.1 A
- Power - Output: 34W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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