MRF8P20165WHSR3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.01GHZ NI780S4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF designs with NXP USA Inc.'s MRF8P20165WHSR3 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.98GHz ~ 2.01GHz
- Gain: 14.8dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 550 mA
- Power - Output: 37W
- Voltage - Rated: 65 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
Related Products
NXP USA Inc.
BF908R,235
Infineon Technologies
PTFA082201EV4R250XTMA1
Ampleon USA Inc.
BLF7G20LS-250P,118
Ampleon USA Inc.
BLF6H10L-160,112
NXP USA Inc.
CLF1G0035-200PU
NXP USA Inc.
ON5257,215
Ampleon USA Inc.
BLF6G27LS-135,112
Ampleon USA Inc.
BLF6G10LS-160RN:11
Infineon Technologies
BF2040WE6814HTSA1
NXP USA Inc.