MRF8P20100HR3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.03GHZ NI780H-4
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The MRF8P20100HR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.03GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 400 mA
- Power - Output: 20W
- Voltage - Rated: 65 V
- Package / Case: NI-780-4
- Supplier Device Package: NI-780-4
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