MRF7S21210HR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ NI-780
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Unlock next-gen RF performance with MRF7S21210HR3 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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