MRF7S21110HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ NI-780S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance MRF7S21110HSR3 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 17.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.1 A
- Power - Output: 33W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
Related Products
Broadcom Limited
ATF-54143-TR1G
Infineon Technologies
PTFA211801EV5XWSA1
NXP USA Inc.
BF512,215
Ampleon USA Inc.
BLF6G20-230PRN,118
CEL
NE3515S02-A
NXP USA Inc.
MRF7S18125AHSR3
Ampleon USA Inc.
BLF6G27-10GHJ
onsemi
J300
Ampleon USA Inc.
BLF6G20-45,112
Broadcom Limited