MRF7S19210HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.99GHZ NI780S
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Meet NXP USA Inc.'s MRF7S19210HSR3, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 20dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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