MRF6S21100MBR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 2.16GHZ TO272-4
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Unlock next-gen RF performance with MRF6S21100MBR1 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.16GHz
- Gain: 14.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.05 A
- Power - Output: 23W
- Voltage - Rated: 68 V
- Package / Case: TO-272-4
- Supplier Device Package: TO-272 WB-4
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