MRF6S21060MR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 2.12GHZ TO270-4
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NXP USA Inc. presents the MRF6S21060MR1 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.12GHz
- Gain: 15.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 610 mA
- Power - Output: 14W
- Voltage - Rated: 68 V
- Package / Case: TO-270-4
- Supplier Device Package: TO-270 WB-4
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