MRF6S21060MBR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 2.12GHZ TO272-4
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Discover high-performance MRF6S21060MBR1 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.12GHz
- Gain: 15.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 610 mA
- Power - Output: 14W
- Voltage - Rated: 68 V
- Package / Case: TO-272-4
- Supplier Device Package: TO-272 WB-4
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