MRF6S19120HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 68V 1.99GHZ NI-780S
$0.00
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Reference Price (USD)
50+
$74.15980
Exquisite packaging
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The MRF6S19120HSR5 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 15dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1 A
- Power - Output: 19W
- Voltage - Rated: 68 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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CEL
NE5550234-AZ
Infineon Technologies