MRF6S19100MBR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 1.99GHZ TO272-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF6S19100MBR1 series by NXP USA Inc. sets new benchmarks in RF transistor technology. With patented noise-reduction architecture and gold metallization for corrosion resistance, these MOSFETs dominate in scientific research and satellite communications. Their plug-and-play compatibility simplifies integration. Elevate your design get a personalized quote within 24 hours!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 14.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 22W
- Voltage - Rated: 68 V
- Package / Case: TO-272-4
- Supplier Device Package: TO-272 WB-4
Related Products
NXP USA Inc.
BLF8G10L-160V,118
onsemi
MCH5835-TL-E
Renesas Electronics America Inc
2SK520-L-A
onsemi
2SK1847-TB-E
Infineon Technologies
PTFA081501E1V4XWSA1
Wolfspeed, Inc.
PXAC182002FC-V1-R0
NXP USA Inc.
A3V09H521-24SR6
Infineon Technologies
PTVA093002TCV1R250XTMA1
NXP USA Inc.
BLF4G20LS-130,112
MACOM Technology Solutions