MRF281ZR1
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.93GHZ NI-200Z
$0.00
Available to order
Reference Price (USD)
500+
$30.44370
Exquisite packaging
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The MRF281ZR1 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.93GHz
- Gain: 12.5dB
- Voltage - Test: 26 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 25 mA
- Power - Output: 4W
- Voltage - Rated: 65 V
- Package / Case: NI-200Z
- Supplier Device Package: NI-200Z
