MNSKCB2N2907A
Microchip Technology
Microchip Technology
MNSKCB2N2907A
$10.89
Available to order
Reference Price (USD)
1+
$10.89000
500+
$10.7811
1000+
$10.6722
1500+
$10.5633
2000+
$10.4544
2500+
$10.3455
Exquisite packaging
Discount
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Optimize your designs with MNSKCB2N2907A by Microchip Technology, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MNSKCB2N2907A is the perfect fit. Contact us today to learn more and place your order with Microchip Technology.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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