MMRF1018NBR1
NXP USA Inc.
NXP USA Inc.
FET RF 120V 860MHZ
$0.00
Available to order
Reference Price (USD)
500+
$52.08546
Exquisite packaging
Discount
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Upgrade your RF designs with NXP USA Inc.'s MMRF1018NBR1 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 860MHz
- Gain: 22dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 350 mA
- Power - Output: 18W
- Voltage - Rated: 120 V
- Package / Case: TO-272BB
- Supplier Device Package: TO-272 WB-4
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