MMDT4146-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 25V 0.2A SOT363
$0.00
Available to order
Reference Price (USD)
3,000+
$0.06300
6,000+
$0.05670
15,000+
$0.05040
30,000+
$0.04725
75,000+
$0.04200
Exquisite packaging
Discount
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Discover high-performance MMDT4146-7-F Bipolar Junction Transistor Arrays from Diodes Incorporated, designed for reliable and efficient circuit applications. These transistor arrays feature excellent current handling, low saturation voltage, and high-speed switching capabilities, making them ideal for amplification and switching tasks. Perfect for use in industrial automation, consumer electronics, and communication devices. Contact us today for a quote and let our experts assist you with your specific requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 300MHz, 250MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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