MJE803G
onsemi
onsemi
TRANS NPN DARL 80V 4A TO126
$0.00
Available to order
Reference Price (USD)
1+
$0.60000
10+
$0.52400
100+
$0.40170
500+
$0.31752
1,000+
$0.25402
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic projects with MJE803G by onsemi, a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, MJE803G provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the onsemi difference.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
onsemi
PN2222_J61Z
Rohm Semiconductor
2SD1866TV2
onsemi
2N5366_D75Z
onsemi
2N4410_D26Z
Infineon Technologies
BC807-40E6359
NXP USA Inc.
BCX53-10/L135
Diodes Incorporated
FZT957TC
onsemi
DTA124ERLRA
onsemi
KSB1098YTU
Panasonic Electronic Components