MJE801STU
onsemi
onsemi
TRANS NPN DARL 60V 4A TO126-3
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Elevate your electronic projects with MJE801STU from onsemi, a top-tier supplier of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single offer fast response times and high durability, making them ideal for high-frequency applications. Whether for telecommunications or computing, MJE801STU delivers. Contact us now to explore how onsemi can meet your needs.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
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