MJE800G
onsemi
onsemi
TRANS NPN DARL 60V 4A TO126
$0.00
Available to order
Reference Price (USD)
1+
$0.60000
10+
$0.51300
100+
$0.38610
500+
$0.30576
1,000+
$0.23888
Exquisite packaging
Discount
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Trust MJE800G by onsemi for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, MJE800G ensures reliability. Get in touch today to request a quote and see why onsemi is a trusted name in the industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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