MJE271G
onsemi
onsemi
TRANS PNP DARL 100V 2A TO126
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust MJE271G by onsemi for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, MJE271G ensures reliability. Get in touch today to request a quote and see why onsemi is a trusted name in the industry.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: 6MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Panjit International Inc.
BC847AW_R1_00001
Central Semiconductor Corp
2N2102 PBFREE
onsemi
MMBT2484LT1G
STMicroelectronics
STN93003
Nexperia USA Inc.
BC847B,235
NTE Electronics, Inc
2N3904
Diodes Incorporated
DSS5160V-7
Fairchild Semiconductor
PN200
Rohm Semiconductor
2SD2670TL
onsemi