MJD31CT4G
onsemi
onsemi
TRANS NPN 100V 3A DPAK
$0.67
Available to order
Reference Price (USD)
2,500+
$0.21296
5,000+
$0.19922
12,500+
$0.18548
25,000+
$0.17586
Exquisite packaging
Discount
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Trust MJD31CT4G by onsemi for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, MJD31CT4G ensures reliability. Get in touch today to request a quote and see why onsemi is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 1.56 W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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