MJ10004
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 350V 20A TO3
$6.48
Available to order
Reference Price (USD)
1+
$6.48000
500+
$6.4152
1000+
$6.3504
1500+
$6.2856
2000+
$6.2208
2500+
$6.156
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with MJ10004 by NTE Electronics, Inc, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, MJ10004 is the perfect fit. Contact us today to learn more and place your order with NTE Electronics, Inc.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 20A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 5V
- Power - Max: 175 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
Related Products
Diodes Incorporated
DN350T05-7
Microchip Technology
JANKCA2N2369A
Diodes Incorporated
FZT489TA
Rohm Semiconductor
2SC4082T106P
Microchip Technology
JANSD2N3700UB/TR
Renesas Electronics America Inc
2SA673C-E
Microchip Technology
2N5681
Panjit International Inc.
2SC2411K_R1_00001
TT Electronics/Optek Technology
2N2907AUA
Renesas Electronics America Inc