MIEB100W1200TEH
IXYS
IXYS
IGBT MODULE 1200V 183A 630W E3
$0.00
Available to order
Reference Price (USD)
5+
$141.41800
Exquisite packaging
Discount
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The MIEB100W1200TEH from IXYS sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with IXYS for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 183 A
- Power - Max: 630 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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